Production and Characterisation of Thin Film Photodetectors Based on Vanadium Pentoxide Using the Pulsed Electron Deposition Method
Project no. 32031 · Status: Kapanmış (Yayın bekleniyor) · 2023
Summary
<p>Today, optoelectronic devices constitute a significant part of the electronics and communications industries, and research and development in this field are gaining importance. These developments are closely related to the discovery of new materials that offer high performance, low cost, and environmentally friendly properties. Silicon is a fundamental component of photodetectors and, due to its high efficiency and mature production technology, accounts for a large portion of photodetector applications. This thesis aims to develop and characterize silicon-supported V2O5-based MOS photodetectors produced using thermal evaporation, and to investigate their various properties. Vanadium pentoxide (V2O5) will be deposited in thin film form onto an (n-Si/SiO2) carrier by thermal evaporation. Subsequently, structural characterization methods such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy (FESEM) will be used to obtain important information about the crystal structure, surface composition, and morphology of the produced thin film. Optical characterizations (transmittance, absorbance) will provide information on how light is absorbed by the film and whether it is transmitted. This is a critical step in understanding the film's optical performance. Electrical characterizations (I-V, I-t, V-t, Van der Pauw) will evaluate critical parameters of photodetectors such as conductivity, resistivity, and photoresponse. These data will provide fundamental information for describing and optimizing photodetector performance. Key parameters such as sensitivity (R), detection capability (D), linear dynamic range (LDR), and response times (tr, tf) will be investigated to explain the application potential of photodetectors. As a result of these characterizations, it will be possible to fabricate metal-oxide-semiconductor V2O5 thin film photodetectors with desired properties and to develop new photodetector designs for technical applications, making a significant contribution to the literature.</p>