Cu2OZnO nanoyapılarının gözenekli silisyum taşıyıcı üzerinde üretimi yapısal ve elektriksel karakterizasyonu
Project no. 20860 · Status: Kapanmış · 2019
Summary
In this project, cuprose oxide-zinc oxide (Cu2O/ZnO) nanostructures were grown by electrochemical deposition method for the first time on a porous silicon (PSi), produced from n-type silicon by anodization method. PSi/Cu2O/ZnO nanostructures were obtained by keeping the current density, deposition time and ZnO concentration at 0.1, 0.3, 0.5, 0.7 and 0.9 mA/cm2, 10, 20, 40 and 80 minutes, 0.08 M and 0.16 M values, respectively, during the deposition process. Structural effects of these experimental parameters on PSi/Cu2O/ZnO nanostructures were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD) methods, X-ray photoelectron spectroscopy (XPS), and electrical properties by current, voltage (I-V) and Hall measurements. SEM analysis revealed that Cu2O nanostructures in octahedron and truncated pyramid structure were obtained for the experimental parameters given above, while ZnO nanostructures changed from spherical to hexagonal nanorods depending on current density and deposition time. XRD and XPS analyses showed that the structure had high crystallinity. As a result of the current-voltage (I-V) measurements of PSi/Cu2O/ZnO samples at room temperature (300 K) and in the dark environment, it was found that samples exhibit rectifier properties and behave like a typical p-n junction diode. It was also found that among the experimental parameters chosen for Cu2O/ZnO, good junction quality, low lattice mismatch and low defect density were obtained at current densities of 0.5 and 0.7 mA/cm2. Within the scope of the project, how the substrate and growth conditions affect the structural and electrical properties of Cu2O/ZnO nanostructures was investigated in detail and by testing different experimental parameters, as a result, the lattice mismatch of PSi/Cu2O/ZnO nanostructures was reduced, the conductivity of the ZnO layer was increased, and the resistance in the Cu2O layer was decreased and targeted results have been achieved. Thus, high quality and efficient material production was realized for extensive advanced technology application projects to be carried out in the future. Keywords: Porous Silicon, Cuprous Oxide (Cu2O), Nanostructures, Electrochemical Deposition, Van der Pauw.