KUPROZ OKSİT (CU2O) NANOYAPILARININ GÖZENEKLİ SİLİSYUM ÜZERİNDE ÜRETİMİ, YAPISAL VE ELEKTRİKSEL KARAKTERİZASYONU
Project no. 20632 · Status: Kapanmış · 2019
Summary
In this project, cuprous oxide (Cu2O) nanostructures on porous silicon (PSi), obtained from n-type silicon by anodization method, were obtained by an electrochemical deposition method. In order to carry out the deposition process, the current density was chosen as 0.2, 0.5 and 0.8 mA/cm2, and the deposition time was selected as 15, 30, 60 and 90 minutes. Solution temperature and pH were kept constant at 65 0C and 12, respectively. Structural effects of these experimental parameters on PSi/Cu2O nanostructures were investigated by scanning electron microscopy (SEM) and X-ray diffraction (XRD) methods, and electrical properties by current, voltage (I-V) and Hall measurements. SEM analysis revealed that Cu2O nanostructures, mostly truncated pyramid-shaped, occurred on a large part of the surface, and their size increased with increasing deposition time and current density at constant pH and temperature. It was observed that these structures aggregated and grow as nanowires upstream from the surface for 90 min. From XRD analysis, it was found that Cu2O nanostructures are mostly polycrystalline, cubic phase and their preferential orientation is along the (111) plane. In addition, it was found that with increasing current density, the average crystallite size of Cu2O nanostructures increased, whereas FWHM, micro deformation and dislocation values decreased. As a result of the current-voltage (I-V) measurements of PSi/Cu2O samples at room temperature (300 K) and in the dark environment, it was found that samples exhibit rectifier properties and behave like a typical p-n junction diode. In addition, it was found that the ideality factor and series resistance, which are important diode parameters, decrease at constant current density in the 15-60 min range. As a result of electrical measurements among the PSi/Cu2O samples, it was found that the 30-minute sample prepared at 0.8 mA/cm2 current density had the highest mobility, lowest resistivity, series resistance and ideality factor values. By changing the experimental parameters, PSi/Cu2O samples, with desired properties can be adapted to existing silicon technology, as a functional material such as a diode, solar cell, etc., is expected to make a great contribution to advanced technological applications and literature.