Fabrication and Characterization of Vanadium Pentoxide Thin-Film Photodiodes with p-n Junctions on Silicon Substrates
Project no. 32266 · Status: Kapanmış (Yayın bekleniyor) · 2024
Summary
<p class="ql-align-justify">Today, while optoelectronic devices constitute an important part of the electronics and communication industry, research and developments in this field are gaining importance day by day. These developments are closely related to the discovery of new materials that offer high performance, low cost, and environmentally friendly features. Silicon is one of the fundamental components of optoelectronic sensors such as photodiodes and photodetectors. Due to its high efficiency, advanced, and easy production technology, it constitutes a large portion of optoelectronic applications. Within the scope of this research project, it is aimed to develop, characterize, and examine the properties of silicon-substrate <img src="data:image/png;base64,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" height="20" width="38"> p-n junction photodiodes produced using the thermal evaporation method. Vanadium pentoxide (<img src="data:image/png;base64,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" height="20" width="38">) will be coated in thin-film form onto a (p-Si) substrate by the thermal evaporation method. Subsequently, significant information regarding the crystal structure, surface composition, and morphology of the produced thin film will be obtained using structural characterization methods, namely X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and field-emission scanning electron microscopy (FESEM). Information regarding how light is absorbed and whether it is transmitted or not by the film will be obtained through optical characterizations (transmittance, absorbance). This is a critical step for understanding the optical performance of the film. Critical parameters of the photodiodes, such as conductivity, resistivity, photo-responses, and behaviors under variable frequencies, will be evaluated via electrical characterizations (<img src="data:image/png;base64,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" height="20" width="105">, Van der Pauw). These data will provide foundational information to explain and optimize the performance of the photodiodes. The application potential of the photodiodes will be investigated based on important parameters such as responsivity (<img src="data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAAsAAAAUCAMAAABs8jdaAAAAAXNSR0IArs4c6QAAAEtQTFRFAAAAAAAAAAA6ADpmADqQAGa2OgAAOma2OpC2OpDbZgAAZrbbZrb/kDoAkLbbkNv/tmYA25A627Zm27aQ2////7Zm/9uQ//+2///bCnyc1AAAAAF0Uk5TAEDm2GYAAAAJcEhZcwAADsQAAA7EAZUrDhsAAAAZdEVYdFNvZnR3YXJlAE1pY3Jvc29mdCBPZmZpY2V/7TVxAAAAVUlEQVQYV6WOWRKAIAxDUxRUxAVF8f4nNS1HIB+dLi+ZAl3KQrnVMr7NA9kd2teYgDewAI+urPA8Ftxhajitw27WGhdcjTBSZ9VJ3GLpFNF4mUvXwz9HpQLHu1/bHQAAAABJRU5ErkJggg==" height="20" width="11">), detectivity (<img src="data:image/png;base64,iVBORw0KGgoAAAANSUhEUgAAAAwAAAAUCAMAAACOLiwjAAAAAXNSR0IArs4c6QAAAFFQTFRFAAAAAAAAAABmADo6ADpmADqQAGa2OgAAOgA6OpDbZgAAZjoAZpC2ZrbbZrb/kDoAkNv/tmYAtpA6ttv/tv//25A629u22////9uQ//+2///bM2XAbQAAAAF0Uk5TAEDm2GYAAAAJcEhZcwAADsQAAA7EAZUrDhsAAAAZdEVYdFNvZnR3YXJlAE1pY3Jvc29mdCBPZmZpY2V/7TVxAAAAVklEQVQoU2NgoByIMgIBMy/EICl+NgYpIUZOMEeSiw9ICrKKgzgSHAJAUpRJBMQRBYtBOYJsICGIMogWCXawAWAtUvwQ/SAtYtwswmAJLpCVPGBxigEAsxwDaou7WRsAAAAASUVORK5CYII=" height="20" width="12">), response times (<img src="data:image/png;base64,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" height="22" width="32">), and other diode characteristics. As a result of these characterizations, the fabrication of p-n junction <img src="data:image/png;base64,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" height="20" width="38"> thin-film photodiodes with desired properties and the development of new photodiode designs with high performance values in technical applications will be possible, providing a significant contribution to the literature.</p><p class="ql-align-justify"></p><p></p>