The effects of grain boundary scattering on electrical resistivity of Ag/NiSi silicide films formed on silicon substrate at 500 °C by RTA
Makaleler > Tam Makale · 2014
Yazarlar: Gökhan UTLU, N. ARTUNC
Applied Surface Science, SCI Expanded İndekslerine Giren Dergi, Uluslararası, Wos, 2014, cilt 310, ss 248-256
DOI: 10.1016/j.apsusc.2014.02.145
Özet
The temperature-dependent resistivity measurements of Ag/Ni-Si silicide films with 28-260 nm thicknesses are studied as a function of temperature and film thickness over the temperature range of 100-900 K. The most striking behavior is that the variation of the resistivity of the films with temperature exhibits an unusual behavior. The total resistivity of the Ag/Ni-Si silicide films in this work increases linearly with temperature up to a T-m temperature, and thereafter decreases rapidly. Our analyses have shown that in the temperature range of 100 to T-m degrees K, the parallel-resistor formula reduces to Matthiessen's rule and theta(D) (Debye temperature) have been found to be about 201-404K for the films. The correlation of the Ag/Ni-Si silicide formation with its electrical and morphological properties is also established.