The calculation of the reflection coefficients by analyzing resistivity data of the Ni–Si silicide films formed at 850°C by RTA
Articles > Article · 2013
Authors: Gökhan UTLU, N. ARTUNC
Microelectronic Engineering, Journal Indexed in SCI Expanded, International, WoS, 2013, vol 113, pp 86-92
DOI: 10.1016/j.mee.2013.07.019
Summary
The total electrical resistivity measurements of the Ni-Si silicide films, with thicknesses of 37-400 nm have been carried out as a function of temperature and film thickness in a wide temperature range of 100-900 K. The temperature-dependence of the total resistivity of the films shows unusual behavior. The total resistivity of the Ni-Si suicide films in this work increases linearly with temperature up to a T-m temperature, thereafter decreases rapidly and finally reaches zero.