Solution processable graphene oxide hole transport layers and their application in P3HT:HHPER active layer based BHJSC
Makaleler > Tam Makale · 2015
Yazarlar: Gorkem Memisoglu, Halide DİKER, CANAN VARLIKLI
TURKISH JOURNAL OF PHYSICS, SCI Expanded İndekslerine Giren Dergi, Uluslararası, Scopus, 2015, cilt 39, ss 254-263
DOI: 10.3906/fiz-1504-5
Özet
Graphene oxide (GO) material was synthesized by an improved Hummers method and characterized by FT-IR, XPS, XRD, AFM, SEM, and UV-VIS analyses. The thickness of the GO layer was measured as 1.5 nm. Solution processed bulk heterojunction solar cells comprising poly(3-hexylthiophene) (P3HT) as the electron donor and N,N'-bis-2-(1-hydoxyhexyl)-3,4,9,10-perylenebis(dicarboximide) (HHPER) as the electron acceptor component of the active layer were produced with and without the GO doped PEDOT-PSS hole transport layers. The optical investigations of the active layer were performed by ground state absorption and photoluminescence measurements. Optimized blend w/w was determined as P3HT:HHPER, 3:1. It was found that the presence of GO in PEDOT:PSS by 0.05 w/w reduces the charge transfer resistance and enhances not only the $J_{sc}$, but also V$_{oc}$ values. However, it cannot inhibit V$_{oc}$ losses obtained through annealing the active layer at temperatures higher than 120 $^{\circ}$C.