The effects of overlayer thicknesses on the electrical resistivity of polycrystalline Cu/Cr double-layered thin films
Makaleler > Tam Makale · 1995
Yazarlar: N Artunc
Journal of Physics: Condensed Matter, Uluslararası, 1995, cilt 7, ss 5229-5238
DOI: 10.1088/0953-8984/7/27/009
Özet
The total electrical resistivity of the Cu/Cr double-layered thin films, the copper base layers of which have thicknesses of 13.0-26.0 nm, is studied as a function of the temperature in the interval 100-300 K and overlayer thickness. The temperature dependence of the electrical resistivity show two types of behaviour. The temperature-dependent resistivity of the Cu/Cr films, the Cr overlayers of which have thicknesses of 1.5 and 2 nm, shows a linear variation, but the variation in the resistivity of the Cu/Cr films, the Cr overlayers of which have thicknesses greater than 7.5 nm, with the temperature exhibits an oscillatory behaviour over the whole temperature range from 100 to 300 K. Our analysis has shown that the observed resistivity increase is caused by an increased surface scattering of the Cu/Cr-I double-layered film in comparison with those of the uncovered copper base films. The interface scattering cannot be the cause of the excess resistivity of both Cu/Cr-I and Cu/Cr-II double-layered films.