Electrical Characterizations of Schottky Diodes οn ITO Modified by Aromatic SAMs
Makaleler > Tam Makale · 2013
Yazarlar: A.K. Havare, S. Okur, N.T. Yagmurcukardes, M. Can, H. Aydin, M. Seker, S. Demic
Acta Physica Polonica A, Uluslararası, Wos, 2013, cilt 123, ss 456-458
DOI: 10.12693/aphyspola.123.456
Özet
In order to understand the electronic properties of the organic Schottky diode, ITO/TPD/Al and ITO/SAM/ TPD/Al organic Schottky devices were fabricated to obtain currentvoltage characteristics.From the slopes and y-axis intercepts of the plots, the values of the ideality factor, barrier heights of the ITO/SAM/TPD/Al diode were determined as 2.03 and 0.56 eV, respectively.The surface characterizations of modied and unmodied ITO were performed via atomic force microscopy.