Amorphous Films of Ternary Zinc and Tin Oxides for Transparent Electronics
Makaleler > Tam Makale · 2018
Yazarlar: S. I. Rembeza, S. A. Belousov, N. N. Kosheleva, E. S. Rembeza, T. V. Svistova, E. Suvaci, E. Ozel, İkbal Gözde KAPTANOĞLU, C. Aciksari
TECHNICAL PHYSICS LETTERS, SCI İndekslerine Giren Dergi, Uluslararası, Wos, 2018, cilt 44, ss 984-987
DOI: 10.1134/S1063785018110147
Özet
Amorphous films of two varieties of zinc stannate (ZnSnO3 and Zn2SnO4) have been considered that were fabricated by radio-frequency sputtering of ceramic compound targets containing ZnO and SnO2 in 1: 1 and 2: 1 ratios. The elemental and phase compositions of the films and their optical and electrical parameters were determined. The transparency of the films in the visible spectral range is on average 87%. Zinc stannate amorphous films have a high electrical conductivity in contrast to amorphous ZnO and SnO2. This phenomenon, which makes it possible to use zinc stannate amorphous films in transparent and flexible electronics, is explained.