Structural properties of sputtered amorphous Ga1-xPxfilms
Articles > Article · 2000
Authors: N Elgun, S J Gurman, E A Davis
Journal of Physics: Condensed Matter, International, WoS, 2000, vol 12, pp 4723-4733
DOI: 10.1088/0953-8984/12/22/305
Summary
a-Ga 1- x P x (0.5⩽ x ⩽1) films have been prepared by r.f. sputtering. The local structure and bonding configurations in these films have been investigated by extended x-ray absorption fine structure (EXAFS) and infrared (IR) spectroscopy measurements. The results show that the network of the films is chemically ordered over the composition range studied. They also show that excess P atoms are incorporated with fourfold coordination into the network for x <0.8. This indicates substitutional alloying, which in turn suggests the dopability of the material.