Structural properties of sputtered amorphous Ga1-xPxfilms
Makaleler > Tam Makale · 2000
Yazarlar: N Elgun, S J Gurman, E A Davis
Journal of Physics: Condensed Matter, Uluslararası, Wos, 2000, cilt 12, ss 4723-4733
DOI: 10.1088/0953-8984/12/22/305
Özet
a-Ga 1- x P x (0.5⩽ x ⩽1) films have been prepared by r.f. sputtering. The local structure and bonding configurations in these films have been investigated by extended x-ray absorption fine structure (EXAFS) and infrared (IR) spectroscopy measurements. The results show that the network of the films is chemically ordered over the composition range studied. They also show that excess P atoms are incorporated with fourfold coordination into the network for x <0.8. This indicates substitutional alloying, which in turn suggests the dopability of the material.