Self-assembly monolayer impact on Schottky diode electrical properties
Makaleler > Tam Makale · 2024
Yazarlar: Adem MUTLU, Mustafa Can, Cem Tozlu
Physica B: Condensed Matter, SCI Expanded İndekslerine Giren Dergi, Uluslararası, Wos, 2024, cilt 696, ss 416686-416686
DOI: 10.1016/j.physb.2024.416686
Özet
This study examines the electrical and charge transport properties of p-Si/TiO2/self-assembly monolayer (SAM)/Al type Schottky diodes. The diodes were fabricated by applying the SAM molecule 4′-[(3-methylphenyl)(phenyl)amino]biphenyl-4-carboxylic acid (CT21) onto titanium dioxide (TiO2) synthesized via the sol-gel method. The key parameters, including the ideality factor (n), series resistance (Rs), and barrier height (∅b), were used to assess the impact of CT21 on diode performance. Experimental results revealed that using CT21 at the TiO2/Al interface significantly enhances diode performance. The n decreased from 3.8 in the control diode to 1.9 with CT21. Rs was substantially reduced, and the ∅b increased. The rectification ratio improved from 1x104 in the control diode to 1.1x105 in the CT21-modified diode. These enhancements, due to the CT21 molecule's ability to reduce interface states (Nss) and improve surface properties, underscore the potential of SAM coatings to open a new window in nanoelectronics with better performance and reliability.