Optimization of 450-nm laser-induced graphene: structural evolution and electronic study
Makaleler > Tam Makale · 2026
Yazarlar: Sefer Haşim BURGAZ, Zuleyha Ozcelik Cetinel, Alper ÇETİNEL
Journal of Materials Science, SCI İndekslerine Giren Dergi, Uluslararası, Wos, 2026, cilt 61, ss 26231-26250
DOI: 10.1007/s10853-026-13395-3
Özet
This study investigates the synthesis of laser-induced graphene (LIG) on polyimide using a 450-nm blue diode laser, aiming to correlate processing parameters with charge transport mechanisms. By systematically varying laser power (1-15%), structural characterizations (SEM, Raman, XPS) revealed a transition from a porous, defective network to a dense, sp(2)-rich graphitic structure. This evolution significantly reduced intrinsic resistivity, achieving a minimum of similar to 1.16 m Omega.cm and a maximum in-plane crystallite size (L-a) of similar to 24 nm at 8% power due to lattice healing and improved carrier mobility. Furthermore, temperature-dependent resistivity analysis (100-450 K) indicated a shift in the conduction mechanism. Transport transitions from fluctuation-induced tunneling in low-power defective states to thermally activated grain-boundary hopping in the optimized nanocrystalline LIG. These findings provide a practical optimization guide for 450-nm LIG, clarifying how structural changes influence electrical performance in flexible electronics.