Impact of Gate Recessing on DC, RF and Noise Parameters of 6H-SiC-based Al0.30Ga0.70N/GaN HEMT for RF and Low Noise Applications Makalesi için Bilirkişi Raporu Yayın Hakemliği-Microsystem Technologies

Expert report > Expert Report · 2022

Authors: Serap ÇELEN

Expert Report, 2022, Türkiye, Ege University, International

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